onsemi UniFET Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 3-Pin SOT-23 FDV303N
- RS Stock No.:
- 121-2747
- Distrelec Article No.:
- 304-36-911
- Mfr. Part No.:
- FDV303N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 100 units)*
Kr.106 20
(exc. VAT)
Kr.132 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 400 unit(s) ready to ship
- Plus 11 700 unit(s) shipping from 28. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | Kr. 1,062 | Kr. 106,20 |
| 500 - 900 | Kr. 0,914 | Kr. 91,40 |
| 1000 + | Kr. 0,794 | Kr. 79,40 |
*price indicative
- RS Stock No.:
- 121-2747
- Distrelec Article No.:
- 304-36-911
- Mfr. Part No.:
- FDV303N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | UniFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 350mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Series UniFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 350mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi UniFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23 FDC6321C
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi UniFET Type P-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- onsemi UniFET Type P-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 FDV304P
- onsemi NTS4409N Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23 NTS4409NT1G