onsemi Isolated 2 Type N-Channel Power MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 unit)*
Kr.6 75
(exc. VAT)
Kr.8 44
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Plus 23 unit(s) shipping from 19. januar 2026
- Final 2 837 unit(s) shipping from 26. januar 2026
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 6,75 |
| 10 - 99 | Kr. 5,72 |
| 100 - 499 | Kr. 5,03 |
| 500 - 999 | Kr. 4,35 |
| 1000 + | Kr. 4,00 |
*price indicative
- RS Stock No.:
- 354-4941
- Mfr. Part No.:
- FDC6303N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | 150°C | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature 150°C | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.7 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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