onsemi Isolated 2 Type N-Channel MOSFET, 500 mA, 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.36 38
(exc. VAT)
Kr.45 475
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 65 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 7,276 | Kr. 36,38 |
| 50 - 95 | Kr. 6,27 | Kr. 31,35 |
| 100 - 495 | Kr. 5,446 | Kr. 27,23 |
| 500 - 995 | Kr. 4,782 | Kr. 23,91 |
| 1000 + | Kr. 4,348 | Kr. 21,74 |
*price indicative
- RS Stock No.:
- 739-0189
- Mfr. Part No.:
- FDG6303N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 770mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.64nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 770mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.64nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Dual N-Channel MOSFET 25 V, 6-Pin SOT-363 FDG6303N
- onsemi Dual N-Channel MOSFET 25 V, 6-Pin SOT-23 FDC6303N
- onsemi Dual N/P-Channel MOSFET 680 mA 6-Pin SOT-23 FDC6321C
- onsemi Dual N/P-Channel-Channel MOSFET 680 mA 6-Pin SOT-23 FDC6321C
- onsemi PowerTrench Dual P-Channel MOSFET 20 V, 6-Pin SOT-363 (SC-70) FDG6318P
- onsemi PowerTrench N-Channel MOSFET 25 V, 6-Pin SOT-363 (SC-70) FDG313N
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 NTJD4001NT1G
- onsemi Dual N-Channel MOSFET 60 V, 6-Pin SOT-363 2N7002DW