Vishay Si4403CDY Type P-Channel MOSFET, 13.4 A, 20 V Enhancement, 8-Pin SOIC SI4403CDY-T1-GE3
- RS Stock No.:
- 121-9657
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 10 units)*
Kr.66 62
(exc. VAT)
Kr.83 28
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 440 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | Kr. 6,662 | Kr. 66,62 |
| 100 - 240 | Kr. 6,269 | Kr. 62,69 |
| 250 - 490 | Kr. 5,663 | Kr. 56,63 |
| 500 - 990 | Kr. 5,336 | Kr. 53,36 |
| 1000 + | Kr. 4,997 | Kr. 49,97 |
*price indicative
- RS Stock No.:
- 121-9657
- Mfr. Part No.:
- SI4403CDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si4403CDY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 5W | |
| Forward Voltage Vf | -0.66V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si4403CDY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 5W | ||
Forward Voltage Vf -0.66V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay P-Channel MOSFET 20 V, 8-Pin SOIC SI4403CDY-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin SOIC SI4431CDY-T1-GE3
- Vishay P-Channel MOSFET 60 V, 8-Pin SOIC SI9407BDY-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin SOIC SI4435DDY-T1-GE3
- Vishay Dual P-Channel MOSFET 20 V, 8-Pin SOIC SI9933CDY-T1-GE3
- Vishay P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3
- Vishay P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- Vishay P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
