Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.13 797 50 

(exc. VAT)

Kr.17 247 50 

(inc. VAT)

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Last RS stock
  • Final 2 500 unit(s), ready to ship
Units
Per unit
Per Reel*
2500 +Kr. 5,519Kr. 13 797,50

*price indicative

RS Stock No.:
919-4198
Mfr. Part No.:
SI4948BEY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.5nC

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

2.4W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Width

4 mm

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
TW

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