Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.8 512 50 

(exc. VAT)

Kr.10 640 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 3,405Kr. 8 512,50

*price indicative

RS Stock No.:
165-6942
Mfr. Part No.:
SI4554DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13.3nC

Maximum Power Dissipation Pd

3.2W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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