Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3
- RS Stock No.:
- 818-1302
- Mfr. Part No.:
- SI4909DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr. 158,62
(exc. VAT)
Kr. 198,28
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 4 940 unit(s) shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 7,931 | Kr. 158,62 |
| 100 - 180 | Kr. 6,733 | Kr. 134,66 |
| 200 - 480 | Kr. 5,71 | Kr. 114,20 |
| 500 - 980 | Kr. 5,306 | Kr. 106,12 |
| 1000 + | Kr. 5,076 | Kr. 101,52 |
*price indicative
- RS Stock No.:
- 818-1302
- Mfr. Part No.:
- SI4909DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 3.2W | |
| Typical Gate Charge Qg @ Vgs | 41.5nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 3.2W | ||
Typical Gate Charge Qg @ Vgs 41.5nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual P-Channel MOSFET, Vishay Semiconductor
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