Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 8-Pin ChipFET SI5935CDC-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr.37 18 

(exc. VAT)

Kr.46 48 

(inc. VAT)

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20 +Kr. 1,859Kr. 37,18

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Packaging Options:
RS Stock No.:
818-1352
Mfr. Part No.:
SI5935CDC-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Package Type

ChipFET

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

156mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

7nC

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Standards/Approvals

No

Length

3.1mm

Height

1.1mm

Width

1.7 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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