Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

RS Stock No.:: 145-2681
Mfr. Part No.:: SI1967DH-T1-GE3
Brand:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

Subtotal (1 reel of 3000 units)*

Kr. 5 175,00

(exc. VAT)

Kr. 6 468,00

(inc. VAT)

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Shipping from 21 December 2026

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Units	Per unit	Per Reel*
3000 +	Kr. 1,725	Kr. 5 175,00

*price indicative

RS Stock No.:: 145-2681
Mfr. Part No.:: SI1967DH-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.1A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	790mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Power Dissipation Pd	1.25W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	1.35mm
	Standards/Approvals	No
	Height	1mm
	Length	2.2mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.1A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 790mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Power Dissipation Pd 1.25W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 1.35mm
	Standards/Approvals No
	Height 1mm
	Length 2.2mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3

This power MOSFET is a surface-mounted P-channel transistor intended for low-voltage switching and analogue functions in compact electronic assemblies. It operates as an enhancement-mode device and is designed to be integrated where isolated transistor configuration and modest continuous current handling are required. The component is supplied in a small SC-88 package suitable for dense layouts.

Features and Benefits:

• 20V drain-source rating enables low-voltage switching
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress

Applications

• Suitable for battery-protection circuits in portable equipment
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces

What mounting style is required for assembly?

It is intended for surface-mount assembly on standard solderable pads compatible with SC-88 footprints.

How many active transistor elements does it contain?

The device contains two elements per chip, enabling dual-function or complementary routing in designs.

What gate voltage limits should designers observe?

The maximum gate-to-source voltage rating is 8V, which must not be exceeded to avoid device stress.

What temperature range can it withstand during operation?

It is specified to operate between -55°C and 150°C, accommodating wide environmental conditions.