Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

Subtotal (1 reel of 2500 units)*

Kr.6 967 50 

(exc. VAT)

Kr.8 710 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 2,787Kr. 6 967,50

*price indicative

RS Stock No.:
165-7226
Mfr. Part No.:
SI4532CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.78W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Width

4 mm

Height

1.5mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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