Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

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Subtotal 10 units (supplied on a continuous strip)*

Kr.109 64 

(exc. VAT)

Kr.137 05 

(inc. VAT)

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Units
Per unit
10 +Kr. 10,964

*price indicative

Packaging Options:
RS Stock No.:
812-3230P
Mfr. Part No.:
SI4564DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20.5nC

Maximum Power Dissipation Pd

3.2W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Width

4 mm

Height

1.55mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


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