Name: Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin D2PAK IRF4905SPBF
Brand: Infineon
SKU: 124-8993
Price: 6.91 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	74 A
	Maximum Drain Source Voltage	55 V
	Series	HEXFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	3.8 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	180 nC @ 10 V
	Length	10.54mm
	Width	8.81mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Height	4.69mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 74 A
	Maximum Drain Source Voltage 55 V
	Series HEXFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 3.8 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 180 nC @ 10 V
	Length 10.54mm
	Width 8.81mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Height 4.69mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF

This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits

• Improves system efficiency through low on-resistance values

• Functions effectively within a temperature range of -55°C to +150°C

• Supports fast switching speeds to enhance performance

• Features robust design for repetitive avalanche conditions

• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications

• Used in power management systems and converters

• Appropriate for motor control requiring high efficiency

• Integrated into switching power supplies for enhanced performance

• Applicable in automotive environments needing dependable control

• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?

The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?

Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?

Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?

The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?

The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.

Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin D2PAK IRF4905SPBF