Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IRFB3607PBF

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.375 00 

(exc. VAT)

Kr.469 00 

(inc. VAT)

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In Stock
  • 400 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 7,50Kr. 375,00
100 - 200Kr. 6,301Kr. 315,05
250 - 450Kr. 5,85Kr. 292,50
500 - 1200Kr. 5,475Kr. 273,75
1250 +Kr. 5,024Kr. 251,20

*price indicative

RS Stock No.:
124-9004
Mfr. Part No.:
IRFB3607PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.82 mm

Length

10.66mm

Automotive Standard

No

COO (Country of Origin):
MX

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