Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 IRFB3307ZPBF

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.1 056 25 

(exc. VAT)

Kr.1 320 30 

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50Kr. 21,125Kr. 1 056,25
100 - 200Kr. 17,746Kr. 887,30
250 - 450Kr. 16,478Kr. 823,90
500 - 950Kr. 15,421Kr. 771,05
1000 +Kr. 14,154Kr. 707,70

*price indicative

RS Stock No.:
165-7607
Mfr. Part No.:
IRFB3307ZPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.66mm

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

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