Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

Kr.48 85 

(exc. VAT)

Kr.61 062 

(inc. VAT)

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Limited stock
  • Plus 60 left, shipping from 29. desember 2025
  • Plus 4 left, shipping from 29. desember 2025
  • Plus 24 left, shipping from 17. februar 2026
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2 - 18Kr. 24,425Kr. 48,85
20 - 48Kr. 19,965Kr. 39,93
50 - 98Kr. 18,535Kr. 37,07
100 - 198Kr. 17,33Kr. 34,66
200 +Kr. 16,13Kr. 32,26

*price indicative

RS Stock No.:
688-6914
Mfr. Part No.:
IRFB3307ZPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

9.02mm

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Automotive Standard

No

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