Toshiba DTMOSIV N-Channel MOSFET, 49.2 A, 650 V, 3-Pin TO-247 TK49N65W5,S1F(S

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Subtotal 1 unit (supplied in a tube)*

Kr.33 13 

(exc. VAT)

Kr.41 41 

(inc. VAT)

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1 +Kr. 33,13

*price indicative

Packaging Options:
RS Stock No.:
125-0577P
Mfr. Part No.:
TK49N65W5,S1F(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

49.2 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

57 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

185 nC @ 10 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.94mm

Transistor Material

Si

Forward Diode Voltage

1.7V

Height

20.95mm


MOSFET Transistors, Toshiba

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