IXYS PolarHVTM HiPerFET Type N-Channel MOSFET, 70 A, 500 V Enhancement, 3-Pin ISOPLUS264 IXFL100N50P
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Brand:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 322,98
(exc. VAT)
Kr. 403,72
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 32 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | Kr. 322,98 |
| 2 - 4 | Kr. 291,26 |
| 5 - 9 | Kr. 283,60 |
| 10 - 24 | Kr. 276,39 |
| 25 + | Kr. 269,64 |
*price indicative
- RS Stock No.:
- 125-8039
- Mfr. Part No.:
- IXFL100N50P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | PolarHVTM HiPerFET | |
| Package Type | ISOPLUS264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.42mm | |
| Length | 20.29mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series PolarHVTM HiPerFET | ||
Package Type ISOPLUS264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Maximum Operating Temperature 150°C | ||
Height 26.42mm | ||
Length 20.29mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS HiperFET PolarHV Series
A range of IXYS PolarHV™ series N-channel Enhancement mode Power MOSFET with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS PolarHVTM HiPerFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin ISOPLUS264
- IXYS Polar HiPerFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin ISOPLUS247
- IXYS Polar HiPerFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin ISOPLUS247 IXFR140N30P
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-268
- IXYS HiperFET Type N-Channel Power MOSFET 250 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264