IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247

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Subtotal (1 unit)*

Kr.136 45 

(exc. VAT)

Kr.170 56 

(inc. VAT)

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1 - 4Kr. 136,45
5 - 9Kr. 130,07
10 +Kr. 124,01

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RS Stock No.:
146-4372
Distrelec Article No.:
302-53-331
Mfr. Part No.:
IXFH60N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

108nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

780W

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Width

5.21 mm

Height

21.34mm

Standards/Approvals

No

Length

16.13mm

Distrelec Product Id

302-53-331

Automotive Standard

No

Low R and Q

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

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