IXYS HiperFET Type N-Channel MOSFET, 60 A, 650 V Enhancement, 3-Pin TO-247 IXFH60N65X2

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.2 733 12 

(exc. VAT)

Kr.3 416 40 

(inc. VAT)

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  • Plus 270 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
30 - 120Kr. 91,104Kr. 2 733,12
150 - 270Kr. 83,909Kr. 2 517,27
300 +Kr. 81,811Kr. 2 454,33

*price indicative

RS Stock No.:
146-4234
Mfr. Part No.:
IXFH60N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

780W

Typical Gate Charge Qg @ Vgs

108nC

Forward Voltage Vf

1.4V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.21 mm

Length

16.13mm

Height

21.34mm

Standards/Approvals

No

Automotive Standard

No

Low R and Q

Avalanche Rated

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

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