IXYS HiperFET Type N-Channel MOSFET, 80 A, 650 V Enhancement, 3-Pin TO-247 IXFH80N65X2

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Subtotal (1 tube of 30 units)*

Kr.3 378 24 

(exc. VAT)

Kr.4 222 80 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 112,608Kr. 3 378,24

*price indicative

RS Stock No.:
146-4236
Mfr. Part No.:
IXFH80N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

650V

Series

HiperFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

140nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

890W

Maximum Operating Temperature

150°C

Height

21.34mm

Width

5.21 mm

Standards/Approvals

No

Length

16.13mm

Distrelec Product Id

304-30-535

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

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