IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 4-Pin TO-220 IXFP80N25X3

Subtotal (1 tube of 50 units)*

Kr.2 662 80 

(exc. VAT)

Kr.3 328 50 

(inc. VAT)

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50 +Kr. 53,256Kr. 2 662,80

*price indicative

RS Stock No.:
146-4233
Mfr. Part No.:
IXFP80N25X3
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

250V

Series

HiperFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

390W

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

16mm

Length

10.66mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of Power Semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has released a new power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs. With on-resistances and gate charges as low as 4.5 milliohms and 21 nanocoulombs, respectively, these devices enable highest power densities and energy efficiencies in a wide variety of high-speed power conversion applications.Developed using a charge compensation principle and proprietary process technology, the new MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry (5 milliohms in the TO-264 package and 4.5 milliohms in the SOT-227, for instance). The fast intrinsic body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing voltage overshoots and electromagnetic interference (EMI), especially in half or full-bridge topologies. With low reverse recovery charge and time, the diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.Well-suited applications include battery chargers for light electric vehicles (LEVs), synchronous rectification in switching power supplies, motor control, DC-DC converters, uninterruptible power supplies, electric forklifts, Class-D audio amplifiers, and telecom systems.The new 250V X3-Class Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227. Some example part numbers include IXFA60N25X3, IXFP80N25X3, IXFT170N25X3HV and IXFK240N25X3, with current ratings of 60A, 80A, 170A, and 240A, respectively.

Lowest on-resistance RDS(ON) and gate charge Qg

Fast soft recovery body diode dv/dt ruggedness

Superior avalanche capability

International standard packages

Battery chargers for light electric vehicles

Synchronous rectification in switching power supplies

Motor control

DC-DC converters

Uninterruptible power supplies

Electric forklifts

Class-D audio amplifiers

Telecom systems

High efficiency

High power density

Improved system reliability

Easy to design in

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