IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263

RS Stock No.:: 146-4403
Distrelec Article No.:: 302-53-297
Mfr. Part No.:: IXFA80N25X3
Brand:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263

Bulk discount available

Subtotal (1 unit)*

Kr.116 54

(exc. VAT)

Kr.145 68

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

200 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 4	Kr. 116,54
5 - 9	Kr. 99,87
10 - 24	Kr. 94,95
25 +	Kr. 91,06

*price indicative

RS Stock No.:: 146-4403
Distrelec Article No.:: 302-53-297
Mfr. Part No.:: IXFA80N25X3
Brand:: IXYS

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	250V
	Series	HiperFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	390W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	83nC
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.83mm
	Width	11.05 mm
	Length	10.41mm
	Distrelec Product Id	30253297
	Automotive Standard	No

	Select all
	Brand IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 250V
	Series HiperFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 390W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 83nC
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.83mm
	Width 11.05 mm
	Length 10.41mm
	Distrelec Product Id 30253297
	Automotive Standard No

Lowest on-resistance RDS(ON) and gate charge Qg

Fast soft recovery body diode dv/dt ruggedness

Superior avalanche capability

International standard packages

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High eﬃciency

High power density

Improved system reliability

Easy to design in

200 MHz/330 DMIPS, MIPS32 microAptiv core

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Hi-Speed USB Device/Host/OTG

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Advanced Memory Protection

2MB Flash memory (plus an additional 160 KB of Boot Flash)

640KB SRAM memory

IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 3-Pin TO-263

FREE delivery for online orders over 500,00 kr

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