Infineon HEXFET N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP
- RS Stock No.:
- 130-0998
- Mfr. Part No.:
- IRFS4010TRL7PP
- Brand:
- Infineon
Get a bulk buy discount
Add 20 more to save 9%
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 91,75
(exc. VAT)
Kr. 114,69
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- 2 unit(s) shipping from 18 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | Kr. 45,875 | Kr. 91,75 | - |
| 20 - 48 | Kr. 41,30 | Kr. 82,60 | 9% |
| 50 - 98 | Kr. 38,555 | Kr. 77,11 | 15% |
| 100 - 198 | Kr. 35,75 | Kr. 71,50 | 22% |
| 200 + | Kr. 19,79 | Kr. 39,58 | 56% |
*price indicative
- RS Stock No.:
- 130-0998
- Mfr. Part No.:
- IRFS4010TRL7PP
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 380W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 380W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 8-Pin TO-263
- Infineon HEXFET N-Channel MOSFET 100 V, 7-Pin TO-263
- Infineon HEXFET N-Channel MOSFET 100 V, 7-Pin TO-263 IRLS4030TRL7PP
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- Infineon HEXFET N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin SO-8 IRF7490TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN IRFH5210TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 IRF7473TRPBF