Infineon HEXFET Type N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- RS Stock No.:
- 827-3877
- Mfr. Part No.:
- IRF7495TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.112 65
(exc. VAT)
Kr.140 81
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 11,265 | Kr. 112,65 |
| 50 - 90 | Kr. 10,713 | Kr. 107,13 |
| 100 - 240 | Kr. 10,251 | Kr. 102,51 |
| 250 - 490 | Kr. 9,575 | Kr. 95,75 |
| 500 + | Kr. 9,012 | Kr. 90,12 |
*price indicative
- RS Stock No.:
- 827-3877
- Mfr. Part No.:
- IRF7495TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Distrelec Product Id | 304-44-453 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Distrelec Product Id 304-44-453 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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