Infineon HEXFET N-Channel MOSFET, 7.3 A, 100 V Enhancement, 8-Pin SOIC IRF7495TRPBF
- RS Stock No.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
Kr. 160,62
(exc. VAT)
Kr. 200,78
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 3 990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 16,062 | Kr. 160,62 |
| 50 - 90 | Kr. 15,261 | Kr. 152,61 |
| 100 - 240 | Kr. 14,62 | Kr. 146,20 |
| 250 - 490 | Kr. 13,659 | Kr. 136,59 |
| 500 + | Kr. 12,847 | Kr. 128,47 |
*price indicative
- RS Stock No.:
- 827-3877
- Distrelec Article No.:
- 304-44-453
- Mfr. Part No.:
- IRF7495TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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