Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF

RS Stock No.:: 826-8838
Mfr. Part No.:: IRF7201TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

Kr. 120,78

(exc. VAT)

Kr. 150,98

(inc. VAT)

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Units	Per unit	Per Pack*
20 - 80	Kr. 6,039	Kr. 120,78
100 - 180	Kr. 4,593	Kr. 91,86
200 - 480	Kr. 4,29	Kr. 85,80
500 - 980	Kr. 3,987	Kr. 79,74
1000 +	Kr. 3,684	Kr. 73,68

*price indicative

RS Stock No.:: 826-8838
Mfr. Part No.:: IRF7201TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	7.3 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	50 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Typical Gate Charge @ Vgs	19 nC @ 10 V
	Width	4mm
	Length	5mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	1.5mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 7.3 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 50 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Typical Gate Charge @ Vgs 19 nC @ 10 V
	Width 4mm
	Length 5mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 1.5mm

COO (Country of Origin):: CN

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Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF

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