Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.21 213 60 

(exc. VAT)

Kr.26 516 80 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 26,517Kr. 21 213,60

*price indicative

RS Stock No.:
217-2641
Mfr. Part No.:
IRLS4030TRL7PP
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

4.1mΩ

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

140nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

15.3mm

Width

4.55 mm

Length

10.35mm

Automotive Standard

No

The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.

Optimized for Logic Level Drive

Very Low RDS(ON) at 4.5V VGS

Superior R*Q at 4.5V VGS I

improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

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