ROHM RF4E110GN N-Channel MOSFET, 11 A, 30 V, 8-Pin DFN RF4E110GNTR

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
133-3281
Mfr. Part No.:
RF4E110GNTR
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Series

RF4E110GN

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

2.1mm

Length

2.1mm

Typical Gate Charge @ Vgs

7.4 nC @ 10 V

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.6mm

N-Channel MOSFET Transistors, ROHM



MOSFET Transistors, ROHM Semiconductor

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