Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX
- RS Stock No.:
- 151-3200
- Mfr. Part No.:
- PMPB215ENEAX
- Brand:
- Nexperia
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
Kr. 96,775
(exc. VAT)
Kr. 120,975
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | Kr. 3,871 | Kr. 96,78 |
| 250 - 600 | Kr. 2,906 | Kr. 72,65 |
| 625 - 1225 | Kr. 2,325 | Kr. 58,13 |
| 1250 - 2475 | Kr. 2,114 | Kr. 52,85 |
| 2500 + | Kr. 1,945 | Kr. 48,63 |
*price indicative
- RS Stock No.:
- 151-3200
- Mfr. Part No.:
- PMPB215ENEAX
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 445mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 15.6W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Height | 0.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 445mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 15.6W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Height 0.65mm | ||
Automotive Standard AEC-Q101 | ||
80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
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