Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN PMPB215ENEAX

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Subtotal (1 pack of 25 units)*

Kr.96 775 

(exc. VAT)

Kr.120 975 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225Kr. 3,871Kr. 96,78
250 - 600Kr. 2,906Kr. 72,65
625 - 1225Kr. 2,325Kr. 58,13
1250 - 2475Kr. 2,114Kr. 52,85
2500 +Kr. 1,945Kr. 48,63

*price indicative

Packaging Options:
RS Stock No.:
151-3200
Mfr. Part No.:
PMPB215ENEAX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

445mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.8nC

Maximum Power Dissipation Pd

15.6W

Maximum Operating Temperature

150°C

Width

2.1 mm

Length

2.1mm

Standards/Approvals

No

Height

0.65mm

Automotive Standard

AEC-Q101

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

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