Nexperia Type N-Channel MOSFET, 2.8 A, 80 V Enhancement, 8-Pin DFN

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Subtotal (1 reel of 3000 units)*

Kr.5 208 00 

(exc. VAT)

Kr.6 510 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 1,736Kr. 5 208,00

*price indicative

RS Stock No.:
151-3071
Mfr. Part No.:
PMPB215ENEAX
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

80V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

445mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

15.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.8nC

Maximum Operating Temperature

150°C

Height

0.65mm

Length

2.1mm

Width

2.1 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

Tin-plated 100 % solderable side pads for optical solder inspection

AEC-Q101 qualified

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