Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3

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Subtotal (1 pack of 25 units)*

Kr.44 50 

(exc. VAT)

Kr.55 50 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225Kr. 1,78Kr. 44,50
250 - 600Kr. 1,734Kr. 43,35
625 - 1225Kr. 1,693Kr. 42,33
1250 - 2475Kr. 1,647Kr. 41,18
2500 +Kr. 1,611Kr. 40,28

*price indicative

Packaging Options:
RS Stock No.:
134-9696
Mfr. Part No.:
SIRA88DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

25W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

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