Vishay SUP50020E Type N-Channel MOSFET, 120 A, 60 V Enhancement, 4-Pin TO-220 SUP50020E-GE3
- RS Stock No.:
- 134-9705
- Mfr. Part No.:
- SUP50020E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.82 37
(exc. VAT)
Kr.102 962
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 21. oktober 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 41,185 | Kr. 82,37 |
| 20 - 98 | Kr. 38,555 | Kr. 77,11 |
| 100 - 198 | Kr. 37,065 | Kr. 74,13 |
| 200 - 498 | Kr. 36,095 | Kr. 72,19 |
| 500 + | Kr. 35,35 | Kr. 70,70 |
*price indicative
- RS Stock No.:
- 134-9705
- Mfr. Part No.:
- SUP50020E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SUP50020E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 126nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.65 mm | |
| Standards/Approvals | No | |
| Length | 10.51mm | |
| Height | 15.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SUP50020E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 126nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 4.65 mm | ||
Standards/Approvals No | ||
Length 10.51mm | ||
Height 15.49mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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