Infineon HEXFET N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF

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Subtotal (1 tube of 50 units)*

Kr. 1 133,20

(exc. VAT)

Kr. 1 416,50

(inc. VAT)

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Units
Per unit
Per Tube*
50 +Kr. 22,664Kr. 1 133,20

*price indicative

RS Stock No.:
145-8610
Mfr. Part No.:
IRFS3306PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

85 nC @ 10 V

Length

4.06mm

Width

9.65mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

14.61mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

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