IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 tube of 20 units)*

Kr.9 172 36 

(exc. VAT)

Kr.11 465 44 

(inc. VAT)

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Units
Per unit
Per Tube*
20 +Kr. 458,618Kr. 9 172,36

*price indicative

RS Stock No.:
146-1770
Mfr. Part No.:
MMIX1F180N25T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

250V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface Mount

Pin Count

24

Channel Mode

Enhancement

Maximum Power Dissipation Pd

570W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Height

5.7mm

Width

23.25 mm

Length

25.25mm

Number of Elements per Chip

1

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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