IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

Kr. 532,60

(exc. VAT)

Kr. 665,75

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 02 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 1Kr. 532,60
2 - 4Kr. 521,89
5 - 9Kr. 505,99
10 - 14Kr. 500,61
15 +Kr. 495,35

*price indicative

Packaging Options:
RS Stock No.:
875-2500
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

595nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

830W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Length

25.25mm

Width

23.25mm

Standards/Approvals

No

Height

5.7mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy