IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr.5 542 11 

(exc. VAT)

Kr.6 927 64 

(inc. VAT)

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Units
Per unit
Per Tube*
10 +Kr. 554,211Kr. 5 542,11

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.07kW

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

715nC

Maximum Operating Temperature

175°C

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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