IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr.3 101 38 

(exc. VAT)

Kr.3 876 72 

(inc. VAT)

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  • 1 240 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +Kr. 310,138Kr. 3 101,38

*price indicative

RS Stock No.:
168-4577
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

525nC

Maximum Power Dissipation Pd

830W

Maximum Operating Temperature

175°C

Length

38.23mm

Width

25.07 mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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