IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

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Subtotal (1 unit)*

Kr.351 96 

(exc. VAT)

Kr.439 95 

(inc. VAT)

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  • 24 unit(s) ready to ship
  • Plus 5 unit(s) ready to ship from another location
  • Plus 1 245 unit(s) shipping from 31. desember 2025
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Per unit
1 - 1Kr. 351,96
2 - 4Kr. 317,23
5 - 9Kr. 302,59
10 - 19Kr. 292,18
20 +Kr. 286,46

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RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

830W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

525nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.6mm

Standards/Approvals

No

Width

25.07 mm

Length

38.23mm

Automotive Standard

No

Distrelec Product Id

30253370

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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