IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr.2 760 47 

(exc. VAT)

Kr.3 450 59 

(inc. VAT)

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  • 10 unit(s) ready to ship
  • Plus 70 unit(s) shipping from 31. desember 2025
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Units
Per unit
Per Tube*
10 +Kr. 276,047Kr. 2 760,47

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

670nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.07kW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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