IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 unit)*

Kr.356 13 

(exc. VAT)

Kr.445 16 

(inc. VAT)

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  • 7 unit(s) ready to ship
  • Plus 72 unit(s) shipping from 31. desember 2025
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Units
Per unit
1 - 1Kr. 356,13
2 - 4Kr. 311,17
5 - 9Kr. 300,87
10 - 19Kr. 293,09
20 +Kr. 286,00

*price indicative

RS Stock No.:
125-8043
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

670nC

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.6mm

Width

25.07 mm

Length

38.23mm

Automotive Standard

No

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