IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

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Subtotal (1 unit)*

Kr.611 67 

(exc. VAT)

Kr.764 59 

(inc. VAT)

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1 - 1Kr. 611,67
2 - 4Kr. 599,46
5 +Kr. 581,15

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RS Stock No.:
125-8042
Distrelec Article No.:
302-53-371
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-227

Series

GigaMOS TrenchT2 HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.07kW

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

715nC

Maximum Operating Temperature

175°C

Length

38.23mm

Width

25.07 mm

Standards/Approvals

No

Height

9.6mm

Distrelec Product Id

30253371

Automotive Standard

No

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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