IXYS Single X2-Class 1 Type N, Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-247 IXTH12N65X2

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
146-1786
Mfr. Part No.:
IXTH12N65X2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-247

Mount Type

Through Hole, Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

180W

Typical Gate Charge Qg @ Vgs

17.7nC

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Length

16.24mm

Height

5.3mm

Width

21.45 mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links