Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR

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Subtotal (1 pack of 25 units)*

Kr. 104,10

(exc. VAT)

Kr. 130,125

(inc. VAT)

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Temporarily out of stock
  • 6 000 unit(s) shipping from 05 August 2026
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Units
Per unit
Per Pack*
25 - 225Kr. 4,164Kr. 104,10
250 - 600Kr. 2,169Kr. 54,23
625 - 1225Kr. 2,009Kr. 50,23
1250 - 2475Kr. 1,954Kr. 48,85
2500 +Kr. 1,917Kr. 47,93

*price indicative

Packaging Options:
RS Stock No.:
153-1876
Mfr. Part No.:
PMV27UPEAR
Brand:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-5.6A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.7nC

Maximum Power Dissipation Pd

4.15W

Maximum Operating Temperature

150°C

Height

1mm

Length

3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

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