Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70

Unavailable
RS will no longer stock this product.
RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Series

TrenchFET

Package Type

SC-70

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.5W

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

9.7nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

2.15mm

Height

0.8mm

Width

2.15 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links