Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.17 675 00 

(exc. VAT)

Kr.22 100 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 7,07Kr. 17 675,00

*price indicative

RS Stock No.:
165-7275
Mfr. Part No.:
SI4164DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

TrenchFET Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

Si4164DY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0032Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

26.5nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

0.72V

Maximum Operating Temperature

150°C

Width

4 mm

Length

5mm

Height

1.55mm

Standards/Approvals

JEDEC JS709A, RoHS

Automotive Standard

No

COO (Country of Origin):
TW

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


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