Infineon Single HEXFET 1 Type P-Channel MOSFET, 5.8 A, 30 V Enhancement, 8-Pin SOIC IRF7406TRPBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
165-8275
Mfr. Part No.:
IRF7406TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.8A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20/20 V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Height

1.5mm

Length

5mm

Width

4 mm

Number of Elements per Chip

1

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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