onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

Kr.8 992 50 

(exc. VAT)

Kr.11 240 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 3,597Kr. 8 992,50

*price indicative

RS Stock No.:
166-1620
Mfr. Part No.:
SI4532DY
Brand:
onsemi
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Brand

onsemi

Product Type

Power MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

4 mm

Height

1.5mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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