Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.5A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	12.9nC
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Width	3.9 mm
	Standards/Approvals	No
	Height	1.57mm
	Length	4.9mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.5A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 12.9nC
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Width 3.9 mm
	Standards/Approvals No
	Height 1.57mm
	Length 4.9mm
	Number of Elements per Chip 2
	Automotive Standard No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated 2 Type N-Channel Power MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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