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onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

RS Stock No.:: 166-2446
Mfr. Part No.:: FDS6900AS
Brand:: onsemi

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

Subtotal (1 reel of 2500 units)*

Kr. 7 362,50

(exc. VAT)

Kr. 9 202,50

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2500 +	Kr. 2,945	Kr. 7 362,50

*price indicative

RS Stock No.:: 166-2446
Mfr. Part No.:: FDS6900AS
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	6.9 A, 8.2 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOIC
	Series	PowerTrench, SyncFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	22 mΩ, 27 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Width	3.99mm
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	10 nC @ 10 V, 11 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 6.9 A, 8.2 A
	Maximum Drain Source Voltage 30 V
	Package Type SOIC
	Series PowerTrench, SyncFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 22 mΩ, 27 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, +20 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Width 3.99mm
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 1.5mm

COO (Country of Origin):: MY

onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS

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