onsemi Isolated 2 Type N-Channel MOSFET, 16 A, 30 V Enhancement, 8-Pin WDFN FDMC7208S
- RS Stock No.:
- 806-3490
- Mfr. Part No.:
- FDMC7208S
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.89 12
(exc. VAT)
Kr.111 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 1 210 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 17,824 | Kr. 89,12 |
| 50 - 95 | Kr. 15,352 | Kr. 76,76 |
| 100 - 495 | Kr. 13,316 | Kr. 66,58 |
| 500 - 995 | Kr. 11,692 | Kr. 58,46 |
| 1000 + | Kr. 10,662 | Kr. 53,31 |
*price indicative
- RS Stock No.:
- 806-3490
- Mfr. Part No.:
- FDMC7208S
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.9W | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 3 mm | |
| Height | 0.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.9W | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 3 mm | ||
Height 0.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
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MOSFET Transistors, ON Semi
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