Infineon HEXFET Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.9 580 80 

(exc. VAT)

Kr.11 976 00 

(inc. VAT)

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Units
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Per Reel*
800 +Kr. 11,976Kr. 9 580,80

*price indicative

RS Stock No.:
168-5978
Mfr. Part No.:
IRF8010STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

260W

Typical Gate Charge Qg @ Vgs

81nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Width

9.65 mm

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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